K. Zou, S. Ismail-Beigi, K. Kisslinger, X. Shen, D. Su, F. J. Walker, and C. Ahn, LaTiO3/KTaO3 interfaces: A new two-dimensional electron gas system. APL Materials, 3, 036104, 2015. DOI: 10.1063/1.4914310
X. Zhu, M. D. Morales-Acosta, J. Shen, F. J. Walker, J. J. Cha, and E. I. Altman, Growth, structure, and electronic properties of nonpolar thin films on a polar substrate: Cr2O3 on ZnO (0001) and ZnO (0001¯). Phys. Rev. B 92, 165414, 2015. DOI: 10.1103/PhysRevB.92.165414
L. Kornblum, D. Morales-Acosta, E. Jin, C. Ahn, and F. Walker. Transport at the Epitaxial Interface between Germanium and Functional Oxides. Advanced Materials Interfaces. 2, 1500193, 2015. DOI: 10.1002/admi.201500193
L. Kornblum, E. Jin, O. Shoron, M. Boucherit, S. Rajan, C. Ahn, and F. Walker, Electronic transport of titanate heterostructures and their potential as channels on (001) Si. J. Appl. Phys. 118, 105301, 2015. DOI: 10.1063/1.4930140
K. Zou, S. Ismail-Beigi, K. Kisslinger, X. Shen, D. Su, F. Walker, and C. Ahn, LaTiO3/KTaO3 interfaces: A new two-dimensional electron gas system. APL Materials, 3, 036104, 2015. DOI: 10.1063/1.4914310
M. Herdiech, X. Zhu, D. Morales-Acosta, F. Walker and E. Altman. The modification of ferroelectric LiNbO3(0001) surfaces using chromium oxide thin films. Phys. Chem. Chem. Phys, 14(17), 9488, 2015. DOI: 10.1039/C4CP05875E
C. A. F Vaz, F. Walker, C. Ahn, and S Ismail-Beigi, Intrinsic interfacial phenomena in manganite heterostructures. J. Phys.: Condens. Matter 27, 123001, 2015. DOI: 10.1088/0953-8984/27/12/123001
A. Disa. D. Kumah, A. Malashevich, H. Chen, D. Arena, E. Specht, S. Ismail-Beigi, F. Walker, and C. Ahn, Orbital engineering in symmetry-breaking polar heterostructures. Physical Review Letters 114, 026801, 2015. DOI:10.1103/PhysRevLetters114.026801
A. Disa, F. Walker, S. Ismail-Beigi, and C. H. Ahn. Research Update: Orbital polarization in LaNiO3-based heterostructures. APL Mater. 3, 062303, 2015. DOI: 10.1063/1.4921456
S. Ismail-Beigi, F. Walker, SW. Cheong, KM. Rabe, and C. H. Ahn, Alkaline earth stannates: The next silicon? APL Mat., 3, 062510, 2015. DOI: 10.1063/1.4921338
L. Kornblum, E. N. Jin, D. P. Kumah, A. T. Ernst, C. C. Broadbridge, C. H. Ahn, and Fred J. Walker,
Oxide 2D electron gases as a route for high carrier densities on (001) Si. Appl. Phys. Lett., 106, 201602, 2015. DOI: 10.1063/1.4921437
K. Galatsis, C. Ahn, I. Krivorotov, P. Kim, R. Lake, K. Wang, J. Chang, A Material Framework for Beyond CMOS Devices. IEEE Journal on Exploratory Sold-State Computational Devices and Circuits, 1, 27, 2015. DOI: 10.1109/JXCDC.2015.2424832
M-G Han, M. S. J. Marshall, L. Wu, F. J. Walker, C. H. Ahn, and Y. Zhua, In Situ Electron Holography of Ferroelectric Thin Films. Microscopy and Microanalysis, 21, S3, 1401, 2015. DOI: 10.1017/S1431927615007783